Switched Bias Differential MOSFET Dosimeter

This paper presents a differential MOSFET sensor reading technique based on the bias controlled cycled measurement. The circuit was implemented, and tested with gamma radiation from a 60-cobalt source. Temperature rejection performance was assessed during the exposure in real-time measurements. The...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 61; no. 3; pp. 1407 - 1413
Main Authors Garcia-Inza, M., Carbonetto, S., Lipovetzky, J., Carra, M. J., Sambuco Salomone, L., Redin, E. G., Faigon, A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Logic gates
MOS sensors
MOSFET
MOSFET dosimeter
radiation effects
Sensitivity
solid-state detectors
Switches
Temperature measurement
Temperature sensors
Threshold voltage
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Summary:This paper presents a differential MOSFET sensor reading technique based on the bias controlled cycled measurement. The circuit was implemented, and tested with gamma radiation from a 60-cobalt source. Temperature rejection performance was assessed during the exposure in real-time measurements. The results show that in comparison with a single MOSFET dosimeter the thermal drift is 20 times smaller and the radiation sensitivity is approximately 10% higher. The switched biasing allows to extend the measurement range beyond MOSFET's threshold voltage saturation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2316337