Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes
An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and...
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Published in | Plasma sources science & technology Vol. 24; no. 3; pp. 35003 - 7 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.05.2015
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Subjects | |
Online Access | Get full text |
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Summary: | An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed. |
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Bibliography: | PSST-100460.R1 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0963-0252 1361-6595 |
DOI: | 10.1088/0963-0252/24/3/035003 |