Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and...

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Published inPlasma sources science & technology Vol. 24; no. 3; pp. 35003 - 7
Main Authors Dolgov, A, Yakushev, O, Abrikosov, A, Snegirev, E, Krivtsun, V M, Lee, C J, Bijkerk, F
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.05.2015
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Summary:An experimental setup that directly reproduces extreme ultraviolet (EUV) lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an ultra-high vacuum experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas, are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed.
Bibliography:PSST-100460.R1
ObjectType-Article-1
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ISSN:0963-0252
1361-6595
DOI:10.1088/0963-0252/24/3/035003