Reliability of Solid-State Drives Based on NAND Flash Memory

This paper reviews the reliability of solid-state drives (SSDs) based on NAND Flash memory from the perspectives of failure mechanisms, design mitigations, qualification methods, and field failure rates. NAND reliability is dominated by gradual memory-cell degradation in late life and defects such a...

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Bibliographic Details
Published inProceedings of the IEEE Vol. 105; no. 9; pp. 1725 - 1750
Main Authors Mielke, Neal R., Frickey, Robert E., Kalastirsky, Ivan, Quan, Minyan, Ustinov, Dmitry, Vasudevan, Venkatesh J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This paper reviews the reliability of solid-state drives (SSDs) based on NAND Flash memory from the perspectives of failure mechanisms, design mitigations, qualification methods, and field failure rates. NAND reliability is dominated by gradual memory-cell degradation in late life and defects such as interconnect shorts earlier in life. Design mitigations exist for these mechanisms. Qualification methods standardized in JEDEC JESD218 are designed to evaluate the mechanisms and mitigations, over a full drive lifetime, in the laboratory. Full-lifetime qualification provides confidence in the long-term reliability of SSDs that cannot be achieved by the early-life qualifications performed on hard disk drives. If NAND mechanisms are sufficiently suppressed, field reliability will be dominated by non-NAND mechanisms such as firmware bugs, power-loss events, radiation-induced soft errors, and failures in non-NAND components. A wide range of design validation and qualification tests are necessary to evaluate these non-NAND mechanisms. Published field reliability statistics indicate that SSDs are more reliable on average than HDDs, but they are not immune to failure, and there is wide variation among models. The NAND and non-NAND mechanisms are illustrated through new case studies of SSD internal qualification and field reliability data.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2017.2725738