A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter...

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Bibliographic Details
Published inEnergies (Basel) Vol. 14; no. 12; p. 3477
Main Authors Wu, Chih-Chiang, Liu, Ching-Yao, Wang, Guo-Bin, Shieh, Yueh-Tsung, Chieng, Wei-Hua, Chang, Edward Yi
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.06.2021
Subjects
Buck converters
D-mode GaN HEMT
Efficiency
Electric fields
Electric potential
Electric properties
Energy conversion efficiency
Feedback
Gallium nitrides
High electron mobility transistors
MOSFETs
P-Cascode GaN HEMT
single gate driver
synchronous buck converter
Transistors
Voltage
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Summary:This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the circuit complexity of the synchronous buck converter, which is widely used to provide non-isolated power for low-voltage and high-current supply to system chips; therefore, the power conversion efficiency of the converter can be improved. In addition, the high side switch using a single D-mode GaN HEMT, which has no body diode, can prevent the bi-directional flow and thus reduce the power loss and cost compared to a design based on a series of two opposite MOSFETs. The experiment shows that the proposed P-Cascode GaN HEMT efficiency is above 98% when it operates at 500 kHz with 6 W output. With the input voltage at 12 V, the synchronous buck converter provides an adjustable regulated output voltage from 1.2 V to 10 V while delivering a maximum output current of 2 A.
ISSN:1996-1073
1996-1073
DOI:10.3390/en14123477