Potential of NiOx/Nickel Silicide/n+ Poly-Si Contact for Perovskite/TOPCon Tandem Solar Cells

In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer...

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Published inEnergies (Basel) Vol. 15; no. 3; p. 870
Main Authors Kim, Jiryang, Pyun, Dowon, Choi, Dongjin, Jeong, Seok-Hyun, Lee, Changhyun, Hyun, Jiyeon, Lee, Ha Eun, Lee, Sang-Won, Song, Hoyoung, Lee, Solhee, Kim, Donghwan, Kang, Yoonmook, Lee, Hae-Seok
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.02.2022
Subjects
Annealing
Contact resistance
Diffusion layers
Efficiency
Electric contacts
Evaporation
Interfaces
Interlayers
Nickel silicide
NiOx/n+ poly-Si contact
perovskite/silicon tandem solar cells
Perovskites
Photovoltaic cells
Polysilicon
Silicon wafers
Solar cells
Thin films
X-ray photoelectron spectroscopy
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Summary:In this work, nickel silicide was applied to tandem solar cells as an interlayer. By the process of thermal evaporation, a layer of NiOx, hole transport layer (HTL) was deposited on n+ poly-Si layer directly. Nickel silicide was simultaneously formed by nickel diffusion from NiOx to n+ poly-Si layer during the deposition and annealing process. The I–V characteristics of NiOx/n+ poly-Si contact with nickel silicide showed ohmic contact and low contact resistivity. This structure is expected to be more advantageous for electrical connection between perovskite top cell and TOPCon bottom cell compared to the NiOx/TCO/n+ poly-Si structure showing Schottky contact. Furthermore, nickel silicide and Ni-deficient NiOx thin film formed by diffusion of nickel can improve the fill factor of the two sub cells. These results imply the potential of a NiOx/nickel silicide/n+ poly-Si structure as a perovskite/silicon tandem solar cell interlayer.
ISSN:1996-1073
1996-1073
DOI:10.3390/en15030870