Effect of phosphorus doping and deposition temperature on the deep-level transient spectra in a-Si:H

• Published in: Japanese Journal of Applied Physics Vol. 31; no. 10B; pp. L1460 - L1462
• Main Authors: NAKATA, J, TSUCHIDA, K, IMAO, S, INUISHI, Y
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.10.1992
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Exact sciences and technology; Impurity and defect levels; Physics; Deep level transient spectrometry; Temperature; Impurity density; Impurity; Phosphorus; Impurity level; Amorphous state; High temperature; Experimental study; Inorganic compound; Charge carrier trapping; Donor center; Charge carrier concentration; Deposition; Low temperature
• DOI: 10.1143/jjap.31.l1460
• ISSN: 0021-4922

Both voltage- and photoinjected deep-level transient spectroscopy measurements were performed on phosphorus-doped a-Si:H films to clarify the nature of a hole trap state located at E v +0.6 eV, which was extinguished by light soaking. The density of trapped holes at the state in as-deposited films was weakly dependent on the phosphorus doping concentration. However, it decreased with increasing deposition temperature of the films. These results suggest that the hole trap state is related to weak silicon bonds which act as a precursor to optical degradation.