Effect of phosphorus doping and deposition temperature on the deep-level transient spectra in a-Si:H

Both voltage- and photoinjected deep-level transient spectroscopy measurements were performed on phosphorus-doped a-Si:H films to clarify the nature of a hole trap state located at E v +0.6 eV, which was extinguished by light soaking. The density of trapped holes at the state in as-deposited films w...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 31; no. 10B; pp. L1460 - L1462
Main Authors NAKATA, J, TSUCHIDA, K, IMAO, S, INUISHI, Y
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.10.1992
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
Deep level transient spectrometry
Temperature
Impurity density
Impurity
Phosphorus
Impurity level
Amorphous state
High temperature
Experimental study
Inorganic compound
Charge carrier trapping
Donor center
Charge carrier concentration
Deposition
Low temperature
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Summary:Both voltage- and photoinjected deep-level transient spectroscopy measurements were performed on phosphorus-doped a-Si:H films to clarify the nature of a hole trap state located at E v +0.6 eV, which was extinguished by light soaking. The density of trapped holes at the state in as-deposited films was weakly dependent on the phosphorus doping concentration. However, it decreased with increasing deposition temperature of the films. These results suggest that the hole trap state is related to weak silicon bonds which act as a precursor to optical degradation.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.31.l1460