Graphene-Silicon Schottky Diodes for Photodetection

We present the optoelectronic characterization of graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n- and p-type Si substrates. We show that medium n-type doping results in the highest rectification. We demonstrate high photoresponsivity, exc...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 17; no. 6; pp. 1133 - 1137
Main Authors Di Bartolomeo, Antonio, Luongo, Giuseppe, Iemmo, Laura, Urban, Francesca, Giubileo, Filippo
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Carbon compounds
Graphene
Heterojunctions
Ionization
Nanoscale devices
Optoelectronics
Photodetectors
Schottky barriers
Schottky diodes
Silicon substrates
White light
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Summary:We present the optoelectronic characterization of graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n- and p-type Si substrates. We show that medium n-type doping results in the highest rectification. We demonstrate high photoresponsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.
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ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2018.2853798