Channel Coding for Nonvolatile Memory Technologies: Theoretical Advances and Practical Considerations

• Published in: Proceedings of the IEEE Vol. 105; no. 9; pp. 1705 - 1724
• Main Authors: Dolecek, Lara, Cassuto, Yuval
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2017; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Algebraic codes; BCH codes; Channel coding; Coding; Computer architecture; Data storage; Drives; error-correction code (ECC); Flash memories; graph codes; LDPC codes; Mathematical analysis; Matrix methods; Memory devices; Microprocessors; Nonvolatile memory; Phase transitions; Reliability; rewrite codes; Solid-state circuits; WOM codes

Every bit of information in a storage or memory device is bound by a multitude of performance specifications, and is subject to a variety of reliability impediments. At the other end, the physical processes tamed to remember our bits offer a constant source of risk to their reliability. These includ...