Mechanism of formation of ytterbium disilicide nanofilms on the Si(111) surface

Thin-film Yb–Si(111) structures have been studied experimentally for different film thicknesses and at substrate temperatures of 300–1500 K. The temperatures at which the formation of ytterbium disilicide begins and ends, the thermal stability, and the work function have been determined. It has been...

Full description

Saved in:
Bibliographic Details
Published inPhysics of the solid state Vol. 57; no. 10; pp. 2112 - 2116
Main Authors Kuz’min, M. V., Mittsev, M. A., Mukhuchev, A. M.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2015
Springer
Subjects
Dielectric films
Electrical conductivity
Physics
Physics and Astronomy
Rare earth metals
Silicides
Solid State Physics
Surface Physics and Thin Films
Thin films
Work Function
Rare Earth Metal
Auger Signal
Ytterbium
Auger Spectrum
Online AccessGet full text

Cover

More Information
Summary:Thin-film Yb–Si(111) structures have been studied experimentally for different film thicknesses and at substrate temperatures of 300–1500 K. The temperatures at which the formation of ytterbium disilicide begins and ends, the thermal stability, and the work function have been determined. It has been shown that yttrium disilicide is formed at relatively low temperatures. The mechanism explaining this fact has been proposed. This mechanism also explains why and in which manner ytterbium transforms silicon into silicide despite the fact that the bond between atoms in the silicon crystal is stronger than that in silicide.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783415100169