Interdiffusion process in the InSe/Pt interface studied by angle-resolved photoemission

• Published in: Surface science Vol. 600; no. 18; pp. 3734 - 3738
• Main Authors: Sánchez-Royo, J.F., Segura, A., Pellicer-Porres, J., Chevy, A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.09.2006; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Layered compounds; Metal-semiconductor interfaces; Physics; Reactivity; Schottky interfaces; X-ray photoemission; X-ray photoemission; Metal-semiconductor interfaces; Reactivity; Schottky interfaces; Layered compounds; Inorganic compounds; Indium selenides; Angular resolution; Semiconductor materials; Semiconductor-metal boundaries; Photoemission; Interdiffusion
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2006.01.076

The electronic structure of the InSe/Pt interface has been studied by angle-resolved and X-ray photoemission measurements. From these results, it has been found that Pt incorporates into the InSe lattice at initial stages of Pt deposition, acting as a surface acceptor-like which tends to turn the interface into intrinsic. Beyond certain Pt submonolayer coverage, the band-bending process appears to be controlled by localized states appearing close to the Fermi level. The appearance of these states has been attributed to a reaction-like mechanism between diffused Pt and InSe atoms. For this interface, it has been found that a final electronic barrier of ∼1.2 eV is formed, close to that expected for an abrupt InSe/Pt Schottky barrier. Nevertheless, the atomic structure of the interface is far from that expected for an ideal Schottky interface.