IGBT Dynamic Loss Reduction through Device Level Soft Switching

Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-...

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Bibliographic Details
Published inEnergies (Basel) Vol. 11; no. 5; p. 1182
Main Authors Ma, Lan, Xu, Hongbing, Huang, Alex, Zou, Jianxiao, Li, Kai
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.05.2018
Subjects
Capacitance
Conduction
Conduction losses
dynamic switching loss
Electric potential
Field effect transistors
hybrid switching method
Loss reduction
MOSFETs
Semiconductor devices
Si IGBT
SiC MOSFET
Silicon
Silicon carbide
Transistors
Voltage
zero current hard voltage (ZCHV)
zero current zero voltage (ZCZV)
zero voltage hard current (ZVHC)
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Summary:Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT) is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC) turn-on and Zero Current Hard Voltage (ZCHV) turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC) inverter are given to validate the effectiveness of the device level hybrid soft switching method application.
ISSN:1996-1073
1996-1073
DOI:10.3390/en11051182