Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter
In this paper, we report one bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with...
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Published in | Energies (Basel) Vol. 13; no. 6; p. 1388 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Basel
MDPI AG
01.03.2020
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, we report one bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear fingers with different ratios of height and width and rear silicon nitride (SiNx) layer with different thickness were optimized, and a highest rear efficiency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear efficiencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 °C) were successfully achieved, respectively. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 1996-1073 1996-1073 |
DOI: | 10.3390/en13061388 |