Determination of optimal insulator thickness for MISiC hydrogen sensors

Response mechanisms of hydrogen sensor based on a metal–insulator–SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-h...

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Bibliographic Details
Published inSolid-state electronics Vol. 48; no. 9; pp. 1673 - 1677
Main Authors Xu, J.P., Lai, P.T., Han, B., Tang, W.M.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2004
Subjects
Hydrogen sensor
Metal–insulator–SiC (MISiC)
Schottky-barrier diode (SBD)
Metal–insulator–SiC (MISiC)
Hydrogen sensor
Schottky-barrier diode (SBD)
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Summary:Response mechanisms of hydrogen sensor based on a metal–insulator–SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2004.04.002