The reliability analysis of GaN-based light-emitting diodes with different current-blocking layers

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Bibliographic Details
Published inSemiconductor science and technology Vol. 26; no. 8; p. 085005
Main Authors Chiou, Y Z, Chiang, T H, Kuo, D S, Chang, S J, Ko, T K, Hon, S J
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2011
Institute of Physics
Subjects
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Injection current
Binary compound
Output power
Electrostatic discharge
Plasma assisted processing
Optoelectronic device
Blocking layer
Reliability
Gallium nitride
Light emitting diode
Damaging
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/8/085005