A very sensitive porous silicon based humidity sensor
A relative humidity (RH) sensor device based on n-type porous silicon has been designed, fabricated and characterized. The simple device is a diode reverse dc biased, exhibiting an extremely high sensitivity in ambient air and a large operating range (30–70% RH). Aging and NO 2 interference on the s...
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Published in | Sensors and actuators. B, Chemical Vol. 111; no. Complete; pp. 135 - 139 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
11.11.2005
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Subjects | |
Online Access | Get full text |
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Summary: | A relative humidity (RH) sensor device based on n-type porous silicon has been designed, fabricated and characterized. The simple device is a diode reverse dc biased, exhibiting an extremely high sensitivity in ambient air and a large operating range (30–70% RH). Aging and NO
2 interference on the sensor performance have been also investigated. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISSN: | 0925-4005 1873-3077 |
DOI: | 10.1016/j.snb.2005.06.048 |