Chemisorption of tert-butanol on Si(1 0 0)

• Published in: Surface science Vol. 602; no. 21; pp. 3432 - 3437
• Main Authors: Chen, T.-L., Yilmaz, M.B., Potapenko, D., Kou, A., Stojilovic, N., Osgood, R.M.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 01.11.2008; Elsevier
• Subjects: Atomic layer deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; High-κ dielectric oxide; Physics; Surface chemical reaction; Temperature-programmed desorption; Tert-butanol; Surface chemical reaction; High-κ dielectric oxide; Tert-butanol; Atomic layer deposition; Temperature-programmed desorption; Si; Chemisorption; TDS; Surface reactions; High-k dielectric oxide; Chemical reactions; Silicon; Organic compounds
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2008.08.012

The chemisorption of tert-butanol, an important product in atomic layer deposition (ALD) of ZrO 2 from the precursor, zirconium tetra- tert-butoxide, on Si(1 0 0)−(2 × 1), has been investigated using Auger electron spectroscopy (AES) and temperature-programmed desorption (TPD). The main desorption products of the TPD experiments are isobutene and molecular hydrogen. A comparison of TPD results obtained with a clean silicon surface with that from a hydrogen-terminated Si surface indicates no chemisorption in the latter case. AES measurements reveal the presence of carbon on the sample after TPD; the amount of carbon tracks the isobutene yield in TPD experiments. A comparison is made of observations with those expected from the known reactions of simple alcohols on Si(1 0 0)−(2 × 1) and the chemisorption attributed dominantly to O–H bond scission to yield an H and tert-butoxy-group-terminated surface.