Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85nm gate length FETs with fT=305GHz at Vds=0.5V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8mum thick. An initial step towa...

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Published inElectronics letters Vol. 43; no. 14; pp. 777 - 779
Main Authors ASHLEY, T, BUCKLE, L, WILDING, P. J, CHAU, R, DATTA, S, EMENY, M. T, HAYES, D. G, HILTON, K. P, JEFFERIES, R, MARTIN, T, PHILLIPS, T. J, WALLIS, D. J
Format Journal Article
LanguageEnglish
Published London Institution of Electrical Engineers 05.07.2007
Subjects
Applied sciences
Circuit properties
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Logic circuit
Field effect transistor
Quantum well
Power consumption
Direct current
Complementary MOS technology
Low-power electronics
Electrical characteristic
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Summary:The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85nm gate length FETs with fT=305GHz at Vds=0.5V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8mum thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-5194
1350-911X
DOI:10.1049/el:20071335