Deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition

• Published in: Thin solid films Vol. 520; no. 4; pp. 1242 - 1245
• Main Authors: Sheel, David W., Gaskell, Jeffrey M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2011; Elsevier
• Subjects: APCVD; Applied sciences; Atmospheric pressure; Barometric pressure; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy; Exact sciences and technology; Fluorine; Fluorine doped indium oxide; Indium oxides; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; Photovoltaic conversion; Photovoltaics; Physics; Precursors; Solar cells. Photoelectrochemical cells; Solar energy; Thin films; Transparent conductive oxide; APCVD; Fluorine doped indium oxide; Transparent conductive oxide; Photovoltaics; Cubic lattices; Electrical conductivity; Atmospheric pressure; Growth rate; Fluorine additions; Indium additions; Indium oxide; Precursor; Photovoltaic cell; Thin films; CVD
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.04.206

We report the deposition of fluorine doped indium oxide by atmospheric pressure chemical vapour deposition (APCVD) using a previously unreported precursor combination; dimethylindium acetylacetonate, [Me 2In(acac)] and trifluoroacetic acid (TFA). This process is potentially scalable for high throughput, large area production. [Me 2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Cubic fluorine doped indium oxide (F.In 2O 3) was deposited at a substrate temperature of 550 °C with growth rates exceeding 8 nm/s. Resistivity was 8 × 10 − 4 Ω cm and transmission for a 200 nm film was > 80% with less than 1% haze.