Electrical and reliability characterization of CuMn self forming barrier interconnects on low-k CDO dielectrics

• Published in: Microelectronic engineering Vol. 92; pp. 49 - 52
• Main Authors: Indukuri, Tejaswi K., Akolkar, Rohan N., Clarke, James S., Genc, Arda, Gstrein, Florian, Harmes, Michael C., Miner, Barbara, Xia, Feng, Zierath, Daniel J., Balakrishnan, Sridhar
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2012; Elsevier
• Subjects: Applied sciences; Barrier; Barriers; Bottom-less via; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Copper; Cross-disciplinary physics: materials science; rheology; CuMn; Design. Technologies. Operation analysis. Testing; Dielectric thin films; Dielectrics; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Dual damascene; Electronics; Exact sciences and technology; Forming; Integrated circuits; Interconnects; Interlayers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Microelectronics; Physical vapor deposition; Physics; Reliability; Self-forming; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sfb; Vapor phase epitaxy; growth from vapor phase; CuMn; Interconnects; Self-forming; Barrier; Reliability; Sfb; Bottom-less via; Interfacial layer; Metallizing; Damascene process; Interconnections; Integrated circuits; Microelectronic fabrication; Wafers; Dielectric thin films; Physical vapor deposition; Copper; Chemical mechanical polishing; Low k dielectric; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.04.043

PVD CuMn self-forming barrier (SFB) approach was investigated on 300mm wafers as an alternative to conventional PVD Ta/Cu metallization. Cu fill on very aggressive dual damascene features targeted for beyond 32nm node was evaluated along with integrated electrical and reliability performance on low-k (k=2.6) interlayer dielectric (ILD).