Effect of oxygen partial pressure on the photoluminescence properties of sol–gel synthesized nano-structured ZnO thin films

Nanostructured ZnO thin films were prepared by spin coating on glass substrate. The precursor ZnO gel powder was thoroughly characterized by particle size measurement, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy...

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Published inThin solid films Vol. 550; pp. 65 - 70
Main Authors Das, Sagnik, Bhattacharjee, Kaustav, Maitra, Saikat, Das, G.C.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.01.2014
Elsevier
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Summary:Nanostructured ZnO thin films were prepared by spin coating on glass substrate. The precursor ZnO gel powder was thoroughly characterized by particle size measurement, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy and selected area diffraction pattern analyses. The sol on heating at 450–650°C resulted in the formation of dried mass with particle size in the range of 30–40nm. The photoluminescence (PL) peak of ZnO thin film heat treated at 450°C for different periods appeared at 400nm. But when the film was heat treated at the same temperature (450°C) under reducing atmosphere, another PL peak appeared at 443nm. Heat treatment of the film at 650°C for 3h under reducing atmosphere resulted in the appearance of PL peaks at 500 and 555nm. The PL peaks developed were related to the defect states of zinc oxide lattice developed at different oxygen partial pressures during the heat treatment. •Nano-structured ZnO thin films were prepared by spin coating.•Heat treatment at different conditions generates different defect states in ZnO.•The defect states control photoluminescence of ZnO at 400, 443, 500 and 555nm.
Bibliography:ObjectType-Article-1
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.10.045