Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm
In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and it...
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Published in | Fiber and integrated optics Vol. 29; no. 2; pp. 85 - 95 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Philadelphia, PA
Taylor & Francis Group
17.03.2010
Taylor & Francis |
Subjects | |
Online Access | Get full text |
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