Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm

• Published in: Fiber and integrated optics Vol. 29; no. 2; pp. 85 - 95
• Main Authors: Casalino, M., Sirleto, L., Moretti, L., Gioffrè, M., Coppola, G., Iodice, M., Rendina, I.
• Format: Journal Article
• Language: English
• Published: Philadelphia, PA Taylor & Francis Group 17.03.2010; Taylor & Francis
• Subjects: Aluminum; Applied sciences; Compatibility; Copper; Electronics; Exact sciences and technology; General equipment and techniques; Holes; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; internal photoemission effect; Microelectronics; Optical fibers; Optoelectronic devices; photo-detector; Physics; resonant cavity enhanced; Schottky diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Silicon; photo-detector; Measurement sensor; Performance characteristic; Resonant structure; internal photoemission effect; Microelectronics; Bragg reflection; Photodetector; Response function; silicon; Photoemission; Optoelectronic device; Cavity resonator; Schottky barrier diode; Comparative study; resonant cavity enhanced; Reflectance

In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and it...