Fabrication and Characterization of a Back-Illuminated Resonant Cavity Enhanced Silicon Photo-Detector Working at 1.55 μm

In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and it...

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Bibliographic Details
Published inFiber and integrated optics Vol. 29; no. 2; pp. 85 - 95
Main Authors Casalino, M., Sirleto, L., Moretti, L., Gioffrè, M., Coppola, G., Iodice, M., Rendina, I.
Format Journal Article
LanguageEnglish
Published Philadelphia, PA Taylor & Francis Group 17.03.2010
Taylor & Francis
Subjects
Aluminum
Applied sciences
Compatibility
Copper
Electronics
Exact sciences and technology
General equipment and techniques
Holes
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
internal photoemission effect
Microelectronics
Optical fibers
Optoelectronic devices
photo-detector
Physics
resonant cavity enhanced
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
Silicon
photo-detector
Measurement sensor
Performance characteristic
Resonant structure
internal photoemission effect
Microelectronics
Bragg reflection
Photodetector
Response function
silicon
Photoemission
Optoelectronic device
Cavity resonator
Schottky barrier diode
Comparative study
resonant cavity enhanced
Reflectance
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Summary:In this article, the realization and characterization of a new kind of resonant cavity enhanced photo-detector, fully compatible with silicon microelectronic technologies and working at 1.55 μm, are reported. The detector is a resonant cavity enhanced structure incorporating a Schottky diode, and its working principle is based on the internal photo-emission effect. A comparison between a Schottky diode (Al/Si or Cu/Si) and the Schottky diode fed on a high-reflectivity Bragg mirror is carried out. Considering Al as Schottky metal, no difference in responsivity is obtained; considering Cu as Schottky metal, a three-fold responsivity improvement is experimentally demonstrated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0146-8030
1096-4681
DOI:10.1080/01468031003596861