Abnormalities associated with grain growth in solid solution Cu(Ni) thin films

A sputter-deposited 80Cu20Ni (at.%) solid solution film was heated in situ using a step-wise annealing schedule within a transmission electron microscope to observe the grain boundary character evolution associated with grain growth. The grain size distribution broadened with increasing temperature...

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Bibliographic Details
Published inThin solid films Vol. 558; pp. 170 - 175
Main Authors Brons, J.G., Thompson, G.B.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 02.05.2014
Elsevier
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Summary:A sputter-deposited 80Cu20Ni (at.%) solid solution film was heated in situ using a step-wise annealing schedule within a transmission electron microscope to observe the grain boundary character evolution associated with grain growth. The grain size distribution broadened with increasing temperature with a corresponding increase in the Σ9 and Σ11 boundary fraction. Particular grains grew at a faster rate than others, as compared to a Cu film, and are attributed to Ni segregation to the grain boundaries. •Cu80Ni20 solid solution films were sputter-deposited onto silicon nitride TEM windows.•These alloy thin films were in situ annealed within the TEM.•Grain boundary motion was quantified using precession-enhanced diffraction.•Particular grains grew at a faster rate than the others, as compared to pure Cu.•Σ9 boundaries outlined the largely growing grains within the films.
Bibliography:ObjectType-Article-1
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content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.03.009