Abnormalities associated with grain growth in solid solution Cu(Ni) thin films
A sputter-deposited 80Cu20Ni (at.%) solid solution film was heated in situ using a step-wise annealing schedule within a transmission electron microscope to observe the grain boundary character evolution associated with grain growth. The grain size distribution broadened with increasing temperature...
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Published in | Thin solid films Vol. 558; pp. 170 - 175 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
02.05.2014
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | A sputter-deposited 80Cu20Ni (at.%) solid solution film was heated in situ using a step-wise annealing schedule within a transmission electron microscope to observe the grain boundary character evolution associated with grain growth. The grain size distribution broadened with increasing temperature with a corresponding increase in the Σ9 and Σ11 boundary fraction. Particular grains grew at a faster rate than others, as compared to a Cu film, and are attributed to Ni segregation to the grain boundaries.
•Cu80Ni20 solid solution films were sputter-deposited onto silicon nitride TEM windows.•These alloy thin films were in situ annealed within the TEM.•Grain boundary motion was quantified using precession-enhanced diffraction.•Particular grains grew at a faster rate than the others, as compared to pure Cu.•Σ9 boundaries outlined the largely growing grains within the films. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2014.03.009 |