Low-power and high-linearity SiGe HBT low-noise amplifier using IM3 cancellation technique

• Published in: Microelectronic engineering Vol. 91; pp. 59 - 63
• Main Authors: Lee, Chie-In, Lin, Wei-Cheng, Lin, Ji-Min
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2012; Elsevier
• Subjects: Amplifiers; Applied sciences; Cancellation; Circuit properties; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; IM3 cancellation technique; Integrated circuits; Linearity; Local area networks; Low noise amplifier; Noise levels; Power consumption; Power gain; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Series-shunt feedback; SiGe; Silicon germanides; Transistors; Wireless communication; Wireless local area network; Wireless local area network; SiGe; Series-shunt feedback; IM3 cancellation technique; Low noise amplifier; Noise figure; Wireless LAN; Ge-Si alloys; Power gain; Feedback regulation; BiCMOS technology; Feedback; Complementary MOS technology; Electric power consumption; Bipolar technology; Silicon; Intermodulation; Heterojunction bipolar transistors; Binary alloy; Semiconductor alloys; Low noise circuit; Shunt; Third order; Cascode connection; Intercept point; Capacitance; Germanium; Low-power electronics; Comparative study; Figure of merit
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.10.005

[Display omitted] ► We propose a novel LNA topology with a series-shunt feedback capacitance. ► We examine the input impedance, noise, and linearity with respect to the capacitance. ► An optimal feedback capacitance can improve the linearity without noise degradation. ► This work demonstrates the highest figure of merit among recently published LNAs. In order to achieve high linearity and low noise figure (NF) simultaneously, a modified cascode structure with a series-shunt feedback capacitance achieving third-order intermodulation (IM3) cancellation is proposed. The proposed LNA is designed and simulated for 5.7 GHz wireless local area network (WLAN) band applications with a 0.35 μm silicon germanium (SiGe) bipolar-CMOS (BiCMOS) process. The LNA has the power gain of 16.25 dB, NF of 2.79 dB, IIP 3 of 3.69 dBm with 4 mW DC power consumption from a supply voltage of 3 V. To our knowledge, by comparison with recently reported LNAs, the presented LNA achieves the highest figure of merit (FOM) by taking into account the power gain, IIP 3, NF, power consumption, and operation frequency.