Negative capacitance in light-emitting devices

• Published in: Solid-state electronics Vol. 53; no. 3; pp. 324 - 328
• Main Authors: Zhu, C.Y., Feng, L.F., Wang, C.D., Cong, H.X., Zhang, G.Y., Yang, Z.J., Chen, Z.Z.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.03.2009; Elsevier
• Subjects: Admittance measurement; Applied sciences; Capacitance; Carrier recombination; Diodes; Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); GaN; Laser diode (LD); Lasers; Light emission; Light-emitting diode (LED); Light-emitting diodes; Luminescence; Mathematical models; Negative capacitance (NC); Optics; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor lasers; laser diodes; Negative capacitance (NC); Light-emitting diode (LED); Laser diode (LD); GaN; Admittance measurement; Binary compound; Luminescence; Active region; Injection laser; Gallium nitride; Light emitting diode; Light emission; Light emitting device; Continuity equation; Charge carrier recombination; Optoelectronic device; Capacitance; Measurement error
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2009.01.002

The negative capacitance behavior in light-emitting diodes and laser diodes has been observed and characterized by using ac admittance–voltage method. Experimental results proved that the strong negative capacitance behavior is always accompanied by remarkable light emission. We confirmed that the negative capacitance is an effect of the junction instead of other behavior or measurement error. We presented a numerical calculation by solving one dimension continuity equation based on a simple diode model. The results show that the negative capacitance behavior in light-emitting diodes has great relation to injected carriers recombination in the active region of luminescence.