Optimization of SnO2/Ag/SnO2 tri-layer films as transparent composite electrode with high figure of merit

• Published in: Thin solid films Vol. 552; pp. 150 - 154
• Main Authors: Yu, Shihui, Zhang, Weifeng, Li, Lingxia, Xu, Dan, Dong, Helei, Jin, Yuxin
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 03.02.2014; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical and optical properties; Electrical resistivity; Electrodes; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Figure of merit; Magnetron sputtering; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Silver; SnO2/Ag/SnO2; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film; Thin film structure and morphology; Tin dioxide; Tin oxides; Transparent conducting; Electrical and optical properties; Magnetron sputtering; SnO2/Ag/SnO2; Transparent conducting; Thin film; Electrical conductivity; Electrical properties; Ag/SnO; Hall effect; Layer thickness; Transmittance; Optimization; Thin films; Near infrared radiation; Cathode sputtering; Composite materials; Sheet resistivity; SnO; Optical properties; Physical vapor deposition; Sputter deposition; Nanostructured materials; Figure of merit; Radiofrequency sputtering
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.11.109

SnO2/Ag/SnO2 tri-layer films were prepared on quartz glass substrates by RF magnetron sputtering of SnO2 and DC magnetron sputtering of Ag. The influence of Ag layer thickness and SnO2 layer thickness on electrical and optical properties of the tri-layer films was investigated. Several analytical tools such as Hall measurements, four-point probe and ultraviolet–visible-near infrared spectrophotometer were used to explore the causes of the changes in electrical and optical properties. For the tri-layer film with top and bottom SnO2 thickness of 50nm and intermediate Ag thickness of 5nm, it exhibits the maximum figure of merit of 6.0×10−2Ω−1 with sheet resistance of 9.67Ω/sq., resistivity of 1.0×10−4Ω·cm and the average transmittance is 94.8% in the visible light region (400–800nm). •SnO2/Ag/SnO2 (SAS) tri-layer film structures prepared by magnetron sputtering•SAS films prepared at different Ag and SnO2 layer thicknesses•SAS films have higher figure of merit than single transparent conductive oxide films.•SAS films have higher figure of merit than other multilayer films.