A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

• Published in: Microelectronics and reliability Vol. 74; pp. 82 - 87
• Main Authors: Azarifar, Mohammad, Donmezer, Nazli
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2017
• Subjects: GaN-based HEMTs; Temperature; Thermal analysis; Thermal resistance; GaN-based HEMTs; Temperature; Thermal analysis; Thermal resistance

Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant o...