A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs

Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant o...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 74; pp. 82 - 87
Main Authors Azarifar, Mohammad, Donmezer, Nazli
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.07.2017
Subjects
GaN-based HEMTs
Temperature
Thermal analysis
Thermal resistance
GaN-based HEMTs
Temperature
Thermal analysis
Thermal resistance
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Summary:Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2017.05.020