A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs
Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant o...
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| Published in | Microelectronics and reliability Vol. 74; pp. 82 - 87 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.07.2017
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| Abstract | Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models. |
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| AbstractList | Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high computational cost of the three-dimensional approaches. The aforementioned simplified models predict inaccurate device temperatures with significant overestimation of the thermal resistance. In order to take advantage of the computational efficiency of the two-dimensional models, a correction procedure is necessary for the accurate representation of the actual device temperatures. In this paper, a novel correction method is introduced for this purpose. Correction technique presented in this study can be used to improve the accuracy of the multiscale numerical thermal device models. |
| Author | Donmezer, Nazli Azarifar, Mohammad |
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| Cites_doi | 10.1063/1.1497704 10.1016/j.mseb.2012.03.024 10.1109/TED.2014.2318672 10.1109/LED.2004.830267 10.1088/0268-1242/26/8/085027 10.1109/LED.2011.2181481 10.1116/1.3567183 10.1109/TCPMT.2014.2299766 10.1109/TED.2007.908874 10.1016/j.microrel.2009.02.009 10.1109/TCPMT.2013.2269273 10.1016/S0307-904X(81)80024-8 10.1063/1.1534935 10.1109/TCAPT.2008.2004586 10.1016/S0038-1101(01)00323-9 10.1049/el:20040071 10.2514/2.6467 10.1016/S0038-1101(98)00210-X 10.1109/TED.2014.2360504 10.2514/1.T4203 10.1109/TMTT.2012.2187535 10.1109/LED.2009.2036574 10.1063/1.326720 10.1109/TMTT.2004.837200 10.1115/1.4024594 |
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| Snippet | Two-dimensional approaches are widely used in the numerical thermal models of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce the high... |
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| SubjectTerms | GaN-based HEMTs Temperature Thermal analysis Thermal resistance |
| Title | A multiscale analytical correction technique for two-dimensional thermal models of AlGaN/GaN HEMTs |
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