Load-Controlled Roll Transfer of Oxide Transistors for Stretchable Electronics

• Published in: Advanced functional materials Vol. 23; no. 16; pp. 2024 - 2032
• Main Authors: Sharma, Bhupendra K., Jang, Bongkyun, Lee, Jeong Eun, Bae, Sang-Hoon, Kim, Tae Woong, Lee, Hak-Joo, Kim, Jae-Hyun, Ahn, Jong-Hyun
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 25.04.2013; WILEY‐VCH Verlag
• Subjects: Electronics; Fracture mechanics; InGaZnO; load-controlled roll transfer mechanics; roll transfer printing; Rolls; Semiconductor devices; Simulation; Strain; stretchable electronics; Stretching; thin film transistor; Thin film transistors
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.201202519

A stretchable and transparent In‐Ga‐Zn‐O (IGZO) thin film transistors with high electrical performance and scalability is demonstrated. A load‐controlled roll transfer method is realized for fully automated and scalable transfer of the IGZO TFTs from a rigid substrate to a nonconventional elastomeric substrate. The IGZO TFTs exhibit high electrical performance under stretching and cyclic tests, demonstrating the potentiality of the load‐controlled roll transfer in stretchable electronics. The mechanics of the load‐controlled roll transfer is investigated and simulated, and it is shown that the strain level experienced by the active layers of the device can be controlled to well below their maximum fracture level during transfer. A roll transfer printing method for In‐Ga‐Zn‐O (IGZO) thin film transistors (TFTs) on a stretchable substrate is demonstrated. The TFTs’ electrical performance is investigated under stretching and cyclic tests. Mechanics involved in the transferring process are investigated and simulated, which shows that the strain level experienced by the device's active layers is well below the maximum fracture level.