A Four‐Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser

• Published in: ETRI journal Vol. 28; no. 4; pp. 533 - 536
• Main Authors: Sim, Jae‐Sik, Kim, Sung‐Bock, Kwon, Yong‐Hwan, Baek, Yong‐Soon, Ryu, Sang‐Wan
• Format: Journal Article
• Language: English
• Published: 한국전자통신연구원 01.08.2006
• Subjects: Distributed Bragg reflector (DBR) laser; electro‐absorption modulator (EAM); selective area growth (SAG); 전자/정보통신공학
• ISSN: 1225-6463; 2233-7326
• DOI: 10.4218/etrij.06.0205.0119

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non‐return to zero operation with 12 dB extinction ratio is obtained. A four‐channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.