Compact 2.5 Gb/s Burst‐Mode Receiver with Optimum APD Gain for XG‐PON1 and GPON Applications

This letter presents a compact 2.5 Gb/s burst‐mode receiver using the first reported monolithic amplifier IC developed with 0.25 …m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the...

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Bibliographic Details
Published inETRI journal Vol. 31; no. 5; pp. 622 - 624
Main Authors Kim, Jongdeog, Le, Quan, Lee, Munseob, Yoo, Hark, Lee, Dong‐Soo, Park, Chang‐Soo
Format Journal Article
LanguageEnglish
Published 한국전자통신연구원 01.10.2009
Subjects
Burst‐mode receiver
GPON
monolithic amplifier IC
XG‐PON1
전자/정보통신공학
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Summary:This letter presents a compact 2.5 Gb/s burst‐mode receiver using the first reported monolithic amplifier IC developed with 0.25 …m SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next‐generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
G704-001110.2009.31.5.019
ISSN:1225-6463
2233-7326
DOI:10.4218/etrij.09.0209.0227