Multiple dip deposition of CdS films prepared by oscillating chemical bath

• Published in: Thin solid films Vol. 518; no. 19; pp. 5387 - 5390
• Main Authors: Gutiérrez-Lazos, C.D., Rosendo, E., Oliva, A.I., Ortega, M., Bartolo-Pérez, P., Juárez, H., Díaz, T., García, G., Rubín, M.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.07.2010; Elsevier
• Subjects: Cadmium; Cadmium sulfide; Cadmium sulfides; Chemical bath deposition; Compact disks; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition; Dipping; Dispersions; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Oscillating; Physics; Stoichiometry; Structure and morphology; thickness; Surface and interface electron states; Surface states, band structure, electron density of states; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin films; X-ray diffraction; Thin films; X-ray diffraction; Chemical bath deposition; Cadmium sulfide; Cadmium; Stoichiometry; Band structure; Electronic properties; XRD; Layer thickness; Preferred orientation; Deposition process; Energy gap; Hexagonal crystals; Energy dispersion; Size effect
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2010.03.065

Highly oriented CdS thin films with thicknesses greater than 1 μm were deposited using the oscillating chemical bath deposition technique with multiple dips at 75 °C, and from 15 to 75 min as deposition times. Samples with different thicknesses were deposited by repeating the chemical deposition process one, two and three times. All CdS films present the α-greenockite hexagonal structure with (002) as the preferential orientation. Band-gap energy values ranged from 2.35 to 2.42 eV, being the smaller value for the two dip processes. Energy dispersion spectroscopy measurements show good stoichiometry of the CdS films with 4.3 at.% as the maximum Cd variation.