Electrical Characteristics of Doped Silicon Nanowire Channel Field-Effect Transistor Biosensors

Optimization of operation conditions for biosensing is investigated for the doped silicon nanowire channel transistor sensors. Sensors with phosphorus doped honeycomb nanowire channel are fabricated on 8-in wafer using the conventional CMOS technology. From the low frequency noise characteristics, t...

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Bibliographic Details
Published inIEEE sensors journal Vol. 17; no. 3; pp. 667 - 673
Main Authors Rim, Taiuk, Kim, Kihyun, Cho, Hyeonsu, Jeong, Wooju, Yoon, Jun-Sik, Kim, Yumi, Meyyappan, M., Baek, Chang-Ki
Format Journal Article
LanguageEnglish
Published New York IEEE 01.02.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Biosensors
Dopamine
Electric potential
Field effect transistors
field-effect transistor sensors
LF noise
Logic gates
low-frequency noise
Nanowires
Neurotransmitters
Optimization
resolution
Semiconductor devices
Sensor phenomena and characterization
Sensors
Silicon
Transistors
Voltage
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Summary:Optimization of operation conditions for biosensing is investigated for the doped silicon nanowire channel transistor sensors. Sensors with phosphorus doped honeycomb nanowire channel are fabricated on 8-in wafer using the conventional CMOS technology. From the low frequency noise characteristics, the noise equivalent gate voltage fluctuation is obtained to evaluate the sensor resolution and optimize the operation condition. The sensor exhibits maximum resolution at the flat band voltage condition. Detection of a neurotransmitter, dopamine, is demonstrated using the fabricated devices, showing a detection limit of 1 fM and a sensitivity of 2.3 mV/log[dopamine] with a resolution of ~60 levels/log[dopamine].
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2016.2625420