Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation

Transistor mismatch due to variability in short-channel effects induced by random dopant fluctuation is modeled in the light of 32-nm HKMG SOI dense SRAM bit-cell data. We present a simple analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode....

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Bibliographic Details
Published inIEEE electron device letters Vol. 33; no. 8; pp. 1099 - 1101
Main Authors Butt, N. Z., Johnson, J. B.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.08.2012
Institute of Electrical and Electronics Engineers
Subjects
Analytical models
Applied sciences
Data models
Design. Technologies. Operation analysis. Testing
Doping
Electronics
Exact sciences and technology
Implants
Integrated circuits
Integrated circuits by function (including memories and processors)
Mismatch
MOSFETs
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
short-channel effect
Transistors
MOS technology
Static random access memory
MOSFET
Random access memory
Doping
Short channel
Mismatching
Modeling
MOSFETs
Silicon on insulator technology
Non volatile memory
short-channel effect
Integrated circuit
Analytical method
Mismatch
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Summary:Transistor mismatch due to variability in short-channel effects induced by random dopant fluctuation is modeled in the light of 32-nm HKMG SOI dense SRAM bit-cell data. We present a simple analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode. The increased mismatch in saturation can be mitigated by optimizing the choice of halo and well implants for channel doping.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2199075