Resistive switching behaviour in a polymannose film for multistate non-volatile memory application
With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives due to their biodegradability and benign environmental impacts. Herein, polymannose is used to demonstrate resistive-switching characteristics with twelve distinctive and reliable memory...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 9; no. 4; pp. 1437 - 145 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
04.02.2021
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Subjects | |
Online Access | Get full text |
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Summary: | With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives due to their biodegradability and benign environmental impacts. Herein, polymannose is used to demonstrate resistive-switching characteristics with twelve distinctive and reliable memory states that were modulated by the compliance current at a READ voltage as low as −0.05 V.
d
-Mannose powder and ethanol were mixed to produce the precursor for the formation of a polymannose film
via
drop casting on an ITO/PET substrate and dried at 160 °C for different durations before an array of Ag was deposited as the top electrode. The optimal drying time of 7 h provided competitive resistive switching characteristics, with a READ window of 2.2 V, high ON/OFF ratio of >10
5
at a relatively low READ voltage of 0.01 V, acceptable endurance cycles of approximately 10
2
, and retention time of >10
4
s. These results demonstrate the potential of polymannose as a candidate material for environmentally friendly resistive-switching random access memory.
With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d0tc04655h |