Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry

• Published in: IEEE transactions on electron devices Vol. 59; no. 12; pp. 3239 - 3242
• Main Authors: Ota, K., Saitoh, M., Tanaka, C., Nakabayashi, Y., Numata, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Heating; Logic gates; Molecular electronics, nanoelectronics; MOSFETs; Performance evaluation; Power demand; Self-heating effect (SHE); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; silicon nanowire (NW) transistor (NW Tr.); silicon on insulator (SOI); Silicon on insulator technology; Temperature measurement; Transistors; MOS technology; silicon nanowire (NW) transistor (NW Tr.); MOSFET; Buried layer; Self-heating effect (SHE); Oxide layer; Thermal behavior; Transistor gate; Nanoelectronics; Thickness; Silicon on insulator technology; Nanowire device; Gate oxide; Electric power consumption; Drain current; Self heating; Silicon; silicon on insulator (SOI)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2218110

Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode.