Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry
Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power co...
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Published in | IEEE transactions on electron devices Vol. 59; no. 12; pp. 3239 - 3242 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.12.2012
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Temperature rise by self-heating effects in nanowire (NW) transistors (NW Trs.) is systematically studied with respect to their dependence on the structural parameters. Temperature rise in NW Tr. is found to be independent of the NW size in sub-100-nm regions when compared at the same total power consumption. This is because the heat generated by the drain current is spread to the area larger than the NW channel. Dependences of temperature rise on other parameters such as gate oxide or buried oxide thickness suggest that heat dissipates mainly via source/drain or substrate not via the gate electrode. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2012.2218110 |