Threshold current density of GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy

• Published in: Japanese Journal of Applied Physics Vol. 30; no. 11B; pp. L1935 - L1937
• Main Authors: MIYAZAWA, S, SEKIGUCHI, Y, MIZUTANI, N
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.11.1991
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optics; Physics; Semiconductor lasers; laser diodes; Crystal growth; Gallium Arsenides; Quantum well; Molecular beam condensation; Aluminium Gallium Arsenides Mixed; Injection laser; Semiconductor laser; Threshold

We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minim...