Threshold current density of GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy

We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minim...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 11B; pp. L1935 - L1937
Main Authors MIYAZAWA, S, SEKIGUCHI, Y, MIZUTANI, N
Format Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 01.11.1991
Subjects
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers; laser diodes
Crystal growth
Gallium Arsenides
Quantum well
Molecular beam condensation
Aluminium Gallium Arsenides Mixed
Injection laser
Semiconductor laser
Threshold
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Summary:We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minima of 600 A/cm 2 and 400 A/cm 2 at the substrate temperatures of 375°C and 650°C, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1935