A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

• Published in: IEEE transactions on microwave theory and techniques Vol. 68; no. 7; pp. 2957 - 2983
• Main Authors: Camarchia, Vittorio, Quaglia, Roberto, Piacibello, Anna, Nguyen, Duy P., Wang, Hua, Pham, Anh-Vu
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bipolar transistors; Broadband; Broadband communication; Design; Gallium arsenide; Gallium nitride; Logic gates; millimeter wave (mm-wave); Millimeter waves; Power amplifiers; power amplifiers (PAs); Semiconductor devices; Silicon; State-of-the-art reviews; Substrates; Transistors; Wave power; Wave spectra

This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar...