A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar...

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Published inIEEE transactions on microwave theory and techniques Vol. 68; no. 7; pp. 2957 - 2983
Main Authors Camarchia, Vittorio, Quaglia, Roberto, Piacibello, Anna, Nguyen, Duy P., Wang, Hua, Pham, Anh-Vu
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bipolar transistors
Broadband
Broadband communication
Design
Gallium arsenide
Gallium nitride
Logic gates
millimeter wave (mm-wave)
Millimeter waves
Power amplifiers
power amplifiers (PAs)
Semiconductor devices
Silicon
State-of-the-art reviews
Substrates
Transistors
Wave power
Wave spectra
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Summary:This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design.
Bibliography:ObjectType-Article-1
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2020.2989792