Effect of annealing process on microstructure and electrical properties of ni films

By DC magnetron sputtering,the Ni films of 600 nm thickness were successfully deposited on BF33 glass substrates.Then annealing at different temperature from 150 to 450°C and different holding time from 3 to 6 hours under vacuum conditions using bonding machine.The surface morphology and structure o...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1209; no. 1; pp. 12005 - 12010
Main Authors Wang, D R, Huang, Z, Wang, L, Jiao, Z l
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.04.2019
Subjects
Annealing
Atomic force microscopes
Atomic force microscopy
Electrical properties
Electrical resistivity
Glass substrates
Magnetic properties
Magnetron sputtering
Microscopes
Morphology
Surface roughness
Thickness
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Summary:By DC magnetron sputtering,the Ni films of 600 nm thickness were successfully deposited on BF33 glass substrates.Then annealing at different temperature from 150 to 450°C and different holding time from 3 to 6 hours under vacuum conditions using bonding machine.The surface morphology and structure of Ni films were analyzed by scanning electron microscopy(SEM), films surface roughness and resistivity were investigated by atomic force microscope(AFM) and four-probe tester respectively. The results show that the annealing process contributes to the refinement of the grains.And the films roughness reaches the best level at the annealing temperature of 300 ° C and the roughness data with holding time of 6h is 0.678 nm. Above all,As the annealing temperature increases, the films resistivity decreases significantly.The surface roughness decreases and the resistivity gradually decreases.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1209/1/012005