High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications
In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current ( I ds ) of 10 μA/μm, JL devices achieve two times higher values of cutoff frequency ( fT ) and...
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Published in | IEEE electron device letters Vol. 33; no. 10; pp. 1477 - 1479 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.10.2012
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current ( I ds ) of 10 μA/μm, JL devices achieve two times higher values of cutoff frequency ( fT ) and maximum oscillation frequency ( f MAX ) along with 65% improvement in voltage gain ( A VO ) in comparison to conventional nonunderlap MOSFETs. ULP JL devices, which do not require source/drain (S/D) profile optimization, can perform comparably to underlap devices, thereby relaxing the stringent process constraints associated with S/D profile optimization in nanoscale devices. The results highlight new opportunities for realizing future ULP analog/RF design with JL transistors. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2012.2210535 |