Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers

The effect of backside oxidation on the size of Oxidation induced Stacking Faults (OSF) at the front side of FZ Si wafers has been investigated by Backside Selective Oxidation (BSO). The results show that shrinkage of OSF under directly formed Si 3 N 4 film is interrupted by BSO. However, shrinkage...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 21; no. 11R; pp. 1547 - 1553
Main Authors Mizuo, Shoichi, Higuchi, Hisayuki
Format Journal Article
LanguageEnglish
Published 01.11.1982
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Summary:The effect of backside oxidation on the size of Oxidation induced Stacking Faults (OSF) at the front side of FZ Si wafers has been investigated by Backside Selective Oxidation (BSO). The results show that shrinkage of OSF under directly formed Si 3 N 4 film is interrupted by BSO. However, shrinkage under double-layered SiO 2 –Si 3 N 4 film is not affected. These results are consistent with the effects of BSO on diffusion of B, P and Sb. The behavior of the OSF's can be explained by the supposition that the Si–SiO 2 interface has the effect of preserving the point defect concentration constant and the Si–Si 3 N 4 interface has no such effect.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.21.1547