The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells

• Published in: Thin solid films Vol. 519; no. 18; pp. 6092 - 6096
• Main Authors: Feng, Shih-Wei, Lin, Hung-Cheng, Chyi, Jen-Inn, Tsai, Chin-Yi, Huang, C.J., Wang, Hsiang-Chen, Yang, Fann-Wei, Lin, Yen-Sheng
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2011; Elsevier
• Subjects: Applied sciences; Carrier dynamic; Carriers; Cross-disciplinary physics: materials science; rheology; Decay; Electronics; Exact sciences and technology; Gallium nitride; Gallium nitrides; Growth interruption; Indium; Indium gallium nitride; Indium gallium nitrides; InGaN/GaN; Interruption; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Multiple quantum wells; Nanoscale materials and structures: fabrication and characterization; Optoelectronic devices; Other semiconductors; Photoluminescence; Physics; Quantum wells; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Specific materials; Theory and models of film growth; Trimethylindium (TMIn) treatment; White light; Trimethylindium (TMIn) treatment; Carrier dynamic; InGaN/GaN; Photoluminescence; Gallium nitride; Growth interruption; Indium gallium nitride; Multiple quantum wells; Localized states; Energy levels; Luminescence; Aggregation; Optical properties; Charge carrier generation; Indium nitride; Arsenic additions; Potential energy; Temperature dependence; Quantum wells; Effective potential; Multiple quantum well; Light emitting diodes; Optoelectronic devices; Indium; III-V compound; Growth mechanism; Green light; Nanostructured materials; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.04.004

Solid-state lighting through light emitting diodes (LEDs) is considered the next generation white-lighting. Because green light affects the quality of white light, significant improvement of the luminescence efficiency of green InGaN LEDs are crucial. In this study, the effects of trimethylindium (TMIn) treatment time during growth interruption on the emission and carrier dynamic characteristics of InGaN/GaN multiple quantum wells with green emission were investigated. TMIn treatment during growth interruption suppresses InGaN decomposition and indium aggregation such that more homogeneous indium composition, higher effective potential level, higher energy (localized) states, stronger photoluminescence (PL) intensity, and an apparent S-shaped variation of the temperature-dependent PL peak position were observed. In addition, as the treatment time increases, the decay time and its variation both become smaller. Because indium composition within the InGaN quantum wells is more homogeneous the longer the treatment time, weaker carrier transport and carrier-localized effects lead to a shorter decay time and better recombination efficiency. The research results provide important information to optimize the performance of green and white LEDs.