Body-Tied Germanium FinFETs Directly on a Silicon Substrate

• Published in: IEEE electron device letters Vol. 33; no. 12; pp. 1678 - 1680
• Main Authors: CHEN, Che-Wei, CHUNG, Cheng-Ting, LUO, Guang-Li, CHIEN, Chao-Hsin
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.12.2012; Institute of Electrical and Electronics Engineers
• Subjects: Annealing; Applied sciences; Body-tied fin field-effect transistors (FinFETs); Compound structure devices; Diodes; Electronics; Exact sciences and technology; FinFETs; Germanium; Heterojunctions; high-mobility channel; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Substrates; Transistors; MOSFET; Diode; Hole mobility; Short channel; Transistor gate; Multiple layer; Dual gate transistor; heterojunctions; Body-tied fin field-effect transistors (FinFETs); Self aligned technology; Field effect transistor; p channel; Misfit dislocation; n type semiconductor; Germanium; High k dielectric; Silicon; high-mobility channel; DIBL effect; Heterojunction
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2217473

We fabricated body-tied Ge p-channel fin field-effect transistors (p-FinFETs) directly on a Si substrate with a high-κ/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p + -Ge/n-Si heterojunctions illustrates a remarkably high I ON /I OFF >; 10 6 despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin width W Fin of ~ 40 nm and a mask channel length L Mask of 120 nm depict a driving current of 22 μA/μm at VG = -2V and a low off-current of 3 nA/μm at VG = 2V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated.