Self-supporting tetrahedral amorphous carbon films consisting of multilayered structure prepared using filtered arc deposition

Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the...

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Published inThin solid films Vol. 675; pp. 123 - 127
Main Authors Harigai, Toru, Miyamoto, Yu, Yamano, Masafumi, Tanimoto, Tsuyoshi, Suda, Yoshiyuki, Takikawa, Hirofumi, Kawano, Takeshi, Nishiuchi, Mamiko, Sakaki, Hironao, Kondo, Kiminori, Kaneko, Satoru, Kunitsugu, Shinsuke
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2019
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Abstract Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the film density of 3.0 g/cm3, 2.7 g/cm3, and 3.0 g/cm3, respectively. The multilayered ta-C film was fabricated using the T-shape filtered arc deposition method on a Si substrate coated water-soluble material. Silk fibroin and dextran were used as the water-soluble material. The water-soluble material formed between a ta-C film and a Si substrate was dissolved, and then, the ta-C film released from the substrate. Thick single-layer ta-C films partially peeled off on the water-soluble material and broke during the dissolving process. Self-supporting ta-C films were obtained by scooping the released ta-C film on a perforated substrate. The laser was irradiated on the self-supporting ta-C films, and the ta-C film with a higher film thickness and/or film density showed a higher laser irradiation tolerance. •Fabrication of self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films•A sacrificial layer dissolution method is used for the fabrication.•Silk fibroin and dextran used as a sacrificial layer•The self-supporting films have a flat shape without wrinkles and cracks.•High laser irradiation tolerance with increasing thickness or density of the ta-C films
AbstractList Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the film density of 3.0 g/cm3, 2.7 g/cm3, and 3.0 g/cm3, respectively. The multilayered ta-C film was fabricated using the T-shape filtered arc deposition method on a Si substrate coated water-soluble material. Silk fibroin and dextran were used as the water-soluble material. The water-soluble material formed between a ta-C film and a Si substrate was dissolved, and then, the ta-C film released from the substrate. Thick single-layer ta-C films partially peeled off on the water-soluble material and broke during the dissolving process. Self-supporting ta-C films were obtained by scooping the released ta-C film on a perforated substrate. The laser was irradiated on the self-supporting ta-C films, and the ta-C film with a higher film thickness and/or film density showed a higher laser irradiation tolerance. •Fabrication of self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films•A sacrificial layer dissolution method is used for the fabrication.•Silk fibroin and dextran used as a sacrificial layer•The self-supporting films have a flat shape without wrinkles and cracks.•High laser irradiation tolerance with increasing thickness or density of the ta-C films
Author Nishiuchi, Mamiko
Takikawa, Hirofumi
Miyamoto, Yu
Kunitsugu, Shinsuke
Kondo, Kiminori
Harigai, Toru
Suda, Yoshiyuki
Kaneko, Satoru
Yamano, Masafumi
Kawano, Takeshi
Tanimoto, Tsuyoshi
Sakaki, Hironao
Author_xml – sequence: 1
  givenname: Toru
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  givenname: Yu
  surname: Miyamoto
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  organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan
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  givenname: Masafumi
  surname: Yamano
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  organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan
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  givenname: Tsuyoshi
  surname: Tanimoto
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  organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan
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  givenname: Yoshiyuki
  orcidid: 0000-0001-9158-546X
  surname: Suda
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  organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan
– sequence: 6
  givenname: Hirofumi
  orcidid: 0000-0002-4462-4654
  surname: Takikawa
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– sequence: 7
  givenname: Takeshi
  surname: Kawano
  fullname: Kawano, Takeshi
  organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan
– sequence: 8
  givenname: Mamiko
  surname: Nishiuchi
  fullname: Nishiuchi, Mamiko
  organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan
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  givenname: Hironao
  surname: Sakaki
  fullname: Sakaki, Hironao
  organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan
– sequence: 10
  givenname: Kiminori
  surname: Kondo
  fullname: Kondo, Kiminori
  organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan
– sequence: 11
  givenname: Satoru
  surname: Kaneko
  fullname: Kaneko, Satoru
  organization: Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
– sequence: 12
  givenname: Shinsuke
  surname: Kunitsugu
  fullname: Kunitsugu, Shinsuke
  organization: Industrial Technology Center of Okayama Prefecture, 5301 Haga, Okayama, Okayama 701-1296, Japan
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Keywords Carbon film target
Self-supporting film
Laser irradiation tolerance
Diamond-like carbon
Laser-driven ion acceleration
Tetrahedral amorphous carbon
Multilayer film
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Snippet Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the...
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SubjectTerms Carbon film target
Diamond-like carbon
Laser irradiation tolerance
Laser-driven ion acceleration
Multilayer film
Self-supporting film
Tetrahedral amorphous carbon
Title Self-supporting tetrahedral amorphous carbon films consisting of multilayered structure prepared using filtered arc deposition
URI https://dx.doi.org/10.1016/j.tsf.2019.02.022
Volume 675
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