Self-supporting tetrahedral amorphous carbon films consisting of multilayered structure prepared using filtered arc deposition
Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the...
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Published in | Thin solid films Vol. 675; pp. 123 - 127 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
01.04.2019
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Abstract | Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the film density of 3.0 g/cm3, 2.7 g/cm3, and 3.0 g/cm3, respectively. The multilayered ta-C film was fabricated using the T-shape filtered arc deposition method on a Si substrate coated water-soluble material. Silk fibroin and dextran were used as the water-soluble material. The water-soluble material formed between a ta-C film and a Si substrate was dissolved, and then, the ta-C film released from the substrate. Thick single-layer ta-C films partially peeled off on the water-soluble material and broke during the dissolving process. Self-supporting ta-C films were obtained by scooping the released ta-C film on a perforated substrate. The laser was irradiated on the self-supporting ta-C films, and the ta-C film with a higher film thickness and/or film density showed a higher laser irradiation tolerance.
•Fabrication of self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films•A sacrificial layer dissolution method is used for the fabrication.•Silk fibroin and dextran used as a sacrificial layer•The self-supporting films have a flat shape without wrinkles and cracks.•High laser irradiation tolerance with increasing thickness or density of the ta-C films |
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AbstractList | Self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films with a multilayered structure were fabricated as a carbon film target for the laser-driven ion acceleration. The self-supporting ta-C films consisted of three layers with the thicknesses of 35 nm, 40 nm, and 35 nm thick, and the film density of 3.0 g/cm3, 2.7 g/cm3, and 3.0 g/cm3, respectively. The multilayered ta-C film was fabricated using the T-shape filtered arc deposition method on a Si substrate coated water-soluble material. Silk fibroin and dextran were used as the water-soluble material. The water-soluble material formed between a ta-C film and a Si substrate was dissolved, and then, the ta-C film released from the substrate. Thick single-layer ta-C films partially peeled off on the water-soluble material and broke during the dissolving process. Self-supporting ta-C films were obtained by scooping the released ta-C film on a perforated substrate. The laser was irradiated on the self-supporting ta-C films, and the ta-C film with a higher film thickness and/or film density showed a higher laser irradiation tolerance.
•Fabrication of self-supporting 110-nm-thick tetrahedral amorphous carbon (ta-C) films•A sacrificial layer dissolution method is used for the fabrication.•Silk fibroin and dextran used as a sacrificial layer•The self-supporting films have a flat shape without wrinkles and cracks.•High laser irradiation tolerance with increasing thickness or density of the ta-C films |
Author | Nishiuchi, Mamiko Takikawa, Hirofumi Miyamoto, Yu Kunitsugu, Shinsuke Kondo, Kiminori Harigai, Toru Suda, Yoshiyuki Kaneko, Satoru Yamano, Masafumi Kawano, Takeshi Tanimoto, Tsuyoshi Sakaki, Hironao |
Author_xml | – sequence: 1 givenname: Toru surname: Harigai fullname: Harigai, Toru email: harigai@ee.tut.ac.jp organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 2 givenname: Yu surname: Miyamoto fullname: Miyamoto, Yu organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 3 givenname: Masafumi surname: Yamano fullname: Yamano, Masafumi organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 4 givenname: Tsuyoshi surname: Tanimoto fullname: Tanimoto, Tsuyoshi organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 5 givenname: Yoshiyuki orcidid: 0000-0001-9158-546X surname: Suda fullname: Suda, Yoshiyuki organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 6 givenname: Hirofumi orcidid: 0000-0002-4462-4654 surname: Takikawa fullname: Takikawa, Hirofumi organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 7 givenname: Takeshi surname: Kawano fullname: Kawano, Takeshi organization: Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Toyohashi, Aichi 441-8580, Japan – sequence: 8 givenname: Mamiko surname: Nishiuchi fullname: Nishiuchi, Mamiko organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan – sequence: 9 givenname: Hironao surname: Sakaki fullname: Sakaki, Hironao organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan – sequence: 10 givenname: Kiminori surname: Kondo fullname: Kondo, Kiminori organization: Kansai Photon Science Institute, National Institutes for Quantum and Radiological Science and Technology, 8-1-7 Umemidai, Kizugawa, Kyoto 619-0215, Japan – sequence: 11 givenname: Satoru surname: Kaneko fullname: Kaneko, Satoru organization: Kanagawa Institute of Industrial Science and Technology, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan – sequence: 12 givenname: Shinsuke surname: Kunitsugu fullname: Kunitsugu, Shinsuke organization: Industrial Technology Center of Okayama Prefecture, 5301 Haga, Okayama, Okayama 701-1296, Japan |
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Keywords | Carbon film target Self-supporting film Laser irradiation tolerance Diamond-like carbon Laser-driven ion acceleration Tetrahedral amorphous carbon Multilayer film |
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SubjectTerms | Carbon film target Diamond-like carbon Laser irradiation tolerance Laser-driven ion acceleration Multilayer film Self-supporting film Tetrahedral amorphous carbon |
Title | Self-supporting tetrahedral amorphous carbon films consisting of multilayered structure prepared using filtered arc deposition |
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