Formation of CuIn1−xAlxSe2 thin films studied by Raman scattering

• Published in: Thin solid films Vol. 519; no. 16; pp. 5329 - 5334
• Main Authors: Olejníček, J., Kamler, C.A., Darveau, S.A., Exstrom, C.L., Slaymaker, L.E., Vandeventer, A.R., Ianno, N.J., Soukup, R.J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2011; Elsevier
• Subjects: Aluminum; Applied sciences; Chalcopyrites; Conversion; Copper Aluminium Indium Selenide; COPPER INDIUM SELENIDE; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Diffraction; Discharges for spectral sources (including inductively coupled plasmas); Electric discharges; Energy; Exact sciences and technology; Inductively coupled plasma; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; PHASES; Photovoltaic conversion; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Precursors; Raman Spectroscopy; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; THIN FILMS; X RAYS; X-ray diffraction; Solar cells; Chalcopyrites; X-ray diffraction; Raman Spectroscopy; Copper Aluminium Indium Selenide; Phonons; Mass spectroscopy; Aluminium; XRD; Raman spectroscopy; Precursor; Thin films; Inductively coupled plasma; Chalcopyrite; Raman scattering; Copper sulfide; Copper Indium Selenides Mixed; Copper; Sputter deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2011.02.030

CuIn1−xAlxSe2 (CIAS) thin films (x=0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1μm were formed by the selenization of sputtered Cu―In―Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and550°C were examined via Raman spectroscopy in the range 50–500cm−1 with resolution of 0.3cm−1. Sequential formation of InxSey, Cu2−xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500°C. For all CuIn1−xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172cm−1 to 186cm−1.