The role of SiHn radicals generation in the mechanisms of formation of thin films of amorphous silicon

In this research, we studied the processes of configuration changes to the structural elements of amorphous silicon thin films created by the decomposition of reacting gas mixture (silane and argon) in low-frequency glow discharge plasma. We analyzed how concentrations of various local atomic groups...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 1260; no. 6; pp. 62001 - 62006
Main Authors Baranova, L V, Strunin, V I, Zh Khudaybergenov, G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2019
Subjects
Amorphous silicon
Argon
Decomposition reactions
Gas mixtures
Glass substrates
Glow discharges
Phase composition
Physics
Silicon films
Structural members
Thin films
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Summary:In this research, we studied the processes of configuration changes to the structural elements of amorphous silicon thin films created by the decomposition of reacting gas mixture (silane and argon) in low-frequency glow discharge plasma. We analyzed how concentrations of various local atomic groups and their links depend on deposition parameters. We also defined phase composition and the role of SiHn radicals generation in the mechanisms of formation of hydrogenated amorphous silicon thin films deposited on glass and Sitall substrates.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1260/6/062001